Part Number Hot Search : 
SD200 CM2009 100B6 ZMM525 331MH DM7403 DM7403 RTS10
Product Description
Full Text Search
 

To Download MC100EP91DWG Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  ? semiconductor components industries, llc, 2016 august, 2016 ? rev. 6 1 publication order number: mc100ep91/d mc100ep91 2.5 v/3.3 v any level positive input to -3.3 v/-5.5 v necl output translator description the mc100ep91 is a triple any level positive input to necl output translator. the device accepts lvpecl, lvttl, lvcmos, hstl, cml or lvds signals, and translates them to differential necl output signals ( ? 3.0 v/ ? 5.5 v). to accomplish the level translation the ep91 requires three power rails. the v cc pins should be connected to the positive power supply, and the v ee pin should be connected to the negative power supply. the gnd pins are connected to the system ground plane. both v ee and v cc should be bypassed to ground via 0.01  f capacitors. under open input conditions, the d input will be biased at v cc /2 and the d input will be pulled to gnd. these conditions will force the q outputs to a low state, and q outputs to a high state, which will ensure stability. the v bb pin, an internally generated voltage supply, is available to this device only. for single-ended input conditions, the unused differential input is connected to v bb as a switching reference voltage. v bb may also rebias ac coupled inputs. when used, decouple v bb and v cc via a 0.01  f capacitor and limit current sourcing or sinking to 0.5 ma. when not used, v bb should be left open. features ? maximum input clock frequency = > 2.0 ghz typical ? maximum input data rate = > 2.0 gb/s typical ? 500 ps typical propagation delay ? operating range: v cc = 2.375 v to 3.8 v; v ee = ? 3.0 v to ? 5.5 v; gnd = 0 v ? q output will default low with inputs open or at gnd ? these devices are pb-free, halogen free and are rohs compliant marking diagrams* *for additional marking information, refer to application note and8002/d . soic ? 20 wb dw suffix case 751d 1 20 a = assembly location wl, l = wafer lot yy, y = year ww, w = work week g or  = pb-free package 100 ep91 alyw   1 24 qfn ? 24 mn suffix case 485l 24 1 20 1 mc100ep91 awlyywwg www.onsemi.com (note: microdot may be in either location) soic ? 20 wb qfn ? 24 ordering information device package shipping ? MC100EP91DWG soic ? 20 wb (pb-free) 38 units / tube mc100ep91dwr2g 1000 tape & reel qfn ? 24 (pb-free) mc100ep91mnr2g 3000 t ape & reel mc100ep91mng 92 units / tube soic ? 20 wb (pb-free) qfn ? 24 (pb-free) ?for information on tape and reel specifications, in- cluding part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d .
mc100ep91 www.onsemi.com 2 d1 d1 d2 q0 q1 q1 v ee d0 q0 d2 d0 v cc figure 1. logic diagram q2 q2 gnd v bb positive level input necl output r1 r1 r1 r1 r1 r1 r2 r2 r2 table 1. pin description pin name i/o default state description soic qfn 1, 20 3, 4, 12 v cc ? ? positive supply voltage. all v cc pins must be externally connected to power supply to guarantee proper opera- tion. 10 15, 16 v ee ? ? negative supply voltage. all v ee pins must be externally connected to power supply to guarantee proper opera- tion. 14, 17 19, 20, 23, 24 gnd ? ? ground. 4, 7 7, 11 v bb ? ? ecl reference voltage output 2, 5, 8 5, 8, 13 d[0:2] lvpecl, lvds, lvttl, lvcmos, cml, hstl input low noninverted differential inputs [0:2]. internal 75 k  to gnd. 3, 6, 9 6, 9, 14 d[0:2] lvpecl, lvds, lvttl,lvcmos, cml, hstl input high inverted differential inputs [0:2]. internal 75 k  to gnd and 75 k  to v cc . when inputs are left open they default to (v cc ? gnd) / 2. 19,16,13 2, 22, 18 q[0:2] necl output ? noninverted differential outputs [0:2]. typically terminated with 50  to v tt = v cc ? 2 v 18,15,12 1, 21, 17 q[0:2] necl output ? inverted differential outputs [0:2]. typically terminated with 50  to v tt = v cc ? 2 v 11 10 nc ? ? no connect. the nc pin is not electrically connected to the die and may safely be connected to any voltage from v ee to v cc . n/a ? ep ? exposed pad. (note 1) 1. the thermally conductive exposed pad on the package bottom (see case drawing) must be attached to a heat ? sinking conduit and may only be electrically connected to v ee (not gnd).
mc100ep91 www.onsemi.com 3 d1 d1 d2 17 18 16 15 14 13 12 4 3 5678 9 q0 11 10 q1 q1 q2 q2 nc v ee d0 19 20 2 1 v cc q0 d0 d2 v cc v bb mc100ep91 gnd gnd v bb figure 2. soic ? 20 lead pinout (top view) v ee d2 gnd q0 d1 v cc v cc gnd gnd q1 v bb nc v bb v cc gnd q1 d1 d2 q2 v ee mc100ep91 figure 3. qfn ? 24 lead pinout (top view)* q2 q0 d0 d0 18 12 4 3 5 6 789 11 10 2 1 17 16 15 14 13 19 24 23 22 20 21 exposed pad (ep) *all v cc , v ee and gnd pins must be externally connected to a power supply and the underside exposed pad must be attached to an adequate heat ? sinking conduit to guarantee proper operation. table 2. attributes characteristics value internal input pulldown resistor (r1) 75 k  internal input pullup resistor (r2) 75 k  esd protection human body model machine model charged device model > 2 kv > 150 v > 2 kv moisture sensitivity (note 1) pb-free pkg soic ? 20 wb qfn ? 24 level 3 level 1 flammability rating oxygen index: 28 to 34 ul 94 v ? 0 @ 0.125 in transistor count 446 devices meets or exceeds jedec spec eia/jesd78 ic latchup test 1. for additional information, see application note and8003/d .
mc100ep91 www.onsemi.com 4 table 3. maximum ratings symbol parameter condition 1 condition 2 rating unit v cc positive power supply gnd = 0 v 3.8 to 0 v v ee negative power supply gnd = 0 v ? 6 v v i positive input voltage gnd = 0 v v i v cc 3.8 to 0 v v op operating voltage gnd = 0 v v cc ? v ee 9.8 v i out output current continuous surge 50 100 ma i bb pecl v bb sink/source 0.5 ma t a operating temperature range ? 40 to +85 c t stg storage temperature range ? 65 to +150 c  ja thermal resistance (junction-to-ambient) jesd 51 ? 3 (1s-single layer test board) 0 lfpm 500 lfpm soic ? 20 wb soic ? 20 wb 90 60 c/w  ja thermal resistance (junction-to-ambient) jesd 51 ? 6 (2s2p multilayer test board) with filled thermal vias 0 lfpm 500 lfpm qfn ? 24 qfn ? 24 37 32 c/w  jc thermal resistance (junction-to-case) standard board soic ? 20 wb qfn ? 24 30 to 35 11 c/w t sol wave solder (pb-free) 225 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device function ality should not be assumed, damage may occur and reliability may be affected. table 4. dc characteristics positive inputs (v cc = 2.5 v, v ee = ? 3.0 v to ? 5.5 v, gnd = 0 v (note 1)) symbol characteristic ? 40 c 25 c 85 c unit min typ max min typ max min typ max i cc positive power supply current 10 14 20 10 14 20 10 14 20 ma v ih input high voltage (single-ended) 1335 v cc 1335 v cc 1335 v cc mv v il input low voltage (single-ended) gnd 875 gnd 875 gnd 875 mv v ihcmr input high voltage common mode range (differential configuration) (note 2) 0 2.5 0 2.5 0 2.5 v i ih input high current (@ v ih ) 150 150 150  a i il input low current (@ v il ) d d 0.5 ? 150 0.5 ? 150 0.5 ? 150  a note: device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printe d circuit board with maintained transverse airflow greater than 500 lfpm. electrical parameters are guaranteed only over the declared operating temperature range. functional operation of the device exceeding these conditions is not implied. device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 1. input parameters vary 1:1 with v cc . v cc can vary +1.3 v / ? 0.125 v. 2. v ihcmr min varies 1:1 with gnd. v ihcmr max varies 1:1 with v cc .
mc100ep91 www.onsemi.com 5 table 5. dc characteristics positive input (v cc = 3.3 v; v ee = ? 3.0 v to ? 5.5 v; gnd = 0 v (note 1)) symbol characteristic ? 40 c 25 c 85 c unit min typ max min typ max min typ max i cc positive power supply current 10 16 24 10 16 24 10 16 24 ma v ih input high voltage (single-ended) 2135 v cc 2135 v cc 2135 v cc mv v il input low voltage (single-ended) gnd 1675 gnd 1675 gnd 1675 mv v bb pecl output voltage reference 1775 1875 1975 1775 1875 1975 1775 1875 1975 mv v ihcmr input high voltage common mode range (differential configuration) (note 2) 0 3.3 0 3.3 0 3.3 v i ih input high current (@ v ih ) 150 150 150  a i il input low current (@ v il ) d d 0.5 ? 150 0.5 ? 150 0.5 ? 150  a note: device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printe d circuit board with maintained transverse airflow greater than 500 lfpm. electrical parameters are guaranteed only over the declared operating temperature range. functional operation of the device exceeding these conditions is not implied. device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 1. input parameters vary 1:1 with v cc . v cc can vary +0.5 / ? 0.925 v. 2. v ihcmr min varies 1:1 with gnd. v ihcmr max varies 1:1 with v cc . table 6. dc characteristics necl output (v cc = 2.375 v to 3.8 v; v ee = ? 3.0 v to ? 5.5 v; gnd = 0 v (note 1)) symbol characteristic ? 40 c 25 c 85 c unit min typ max min typ max min typ max i ee negative power supply current 40 50 60 38 50 68 38 50 68 ma v oh output high voltage (note 2) ? 1145 ? 1020 ? 895 ? 1145 ? 1020 ? 895 ? 1145 ? 1020 ? 895 mv v ol output low voltage (note 2) ? 1945 ? 1770 ? 1600 ? 1945 ? 1770 ? 1600 ? 1945 ? 1770 ? 1600 mv note: device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printe d circuit board with maintained transverse airflow greater than 500 lfpm. electrical parameters are guaranteed only over the declared operating temperature range. functional operation of the device exceeding these conditions is not implied. device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 1. output parameters vary 1:1 with gnd. 2. all loading with 50  resistor to gnd ? 2.0 v.
mc100ep91 www.onsemi.com 6 table 7. ac characteristics (v cc = 2.375 v to 3.8 v; v ee = ? 3.0 v to ? 5.5 v; gnd = 0 v) symbol characteristic ? 40 c 25 c 85 c unit min typ max min typ max min typ max v outpp output voltage amplitude f in 1.0 ghz (figure 4) f in 1.5 ghz (note 1) f in 2.0 ghz 575 525 300 800 750 600 600 525 250 800 750 550 550 400 150 800 750 500 mv t plh t phl0 propagation delay differential d to q single-ended 375 300 500 450 600 650 375 300 500 450 600 675 400 300 550 500 650 750 ps t skew pulse skew (note 2) output-to-output (note 3) part-to-part (diff) (note 3) 15 25 50 75 95 125 15 30 50 75 105 125 15 30 70 80 105 150 ps t jitter rms random clock jitter (note 4) f in = 2.0 ghz peak-to-peak data dependant jitter f in = 2.0 gb/s (note 5) 0.5 20 2.0 0.5 20 2.0 0.5 20 2.0 ps v inpp input voltage swing (differential configuration) (note 6) 200 800 1200 200 800 1200 200 800 1200 mv t r , t f output rise/fall times @ 50 mhz (20% ? 80%) q, q 75 150 250 75 150 250 75 150 275 ps note: device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printe d circuit board with maintained transverse airflow greater than 500 lfpm. electrical parameters are guaranteed only over the declared operating temperature range. functional operation of the device exceeding these conditions is not implied. device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 1. measured using a 750 mv source, 50% duty cycle clock source. all loading with 50  to gnd ? 2.0 v. input edge rates 150 ps (20% ? 80%). 2. pulse skew = |t plh ? t phl | 3. skews are valid across specified voltage range, part-to-part skew is for a given temperature. 4. rms jitter with 50% duty cycle input clock signal. 5. peak-to-peak jitter with input nrz prbs 2 31 ? 1 at 2.0 gb/s. 6. input voltage swing is a single-ended measurement operating in differential mode. the device has a dc gain of 50. figure 4. output voltage amplitude (v outpp ) / rms jitter vs. input frequency (f in ) at ambient temperature (typical) input frequency (ghz) 0.5 1.0 1.5 2.0 2.5 250 350 450 550 650 750 850 output voltage amplitude (mv) rms jitter (ps) 9.0 8.0 10 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 rms jitter amp figure 5. ac reference measurement d d q q t phl t plh v inpp = v ih (d) ? v il (d) v outpp = v oh (q) ? v ol (q)
mc100ep91 www.onsemi.com 7 application information all mc100ep91 inputs can accept lvpecl, lvttl, lvcmos, hstl, cml, or lvds signal levels. the limitations for differential input signal (lvds, hstl, lvpecl, or cml) are the minimum input swing of 150 mv and the maximum input swing of 3.0 v. within these conditions, the input voltage can range from v cc to gnd. examples interfaces are illustrated below in a 50  environment (z = 50  ). v ee gnd gnd v ee z z v cc v cc gnd lvpecl driver ep91 50  v tt = v cc ? 2.0 v 50  d d v cc v cc lvds driver ep91 z z d d 100  figure 6. standard lvpecl interface z z v cc v cc hstl driver ep91 50  50  d d gnd z z v cc v cc cml driver ep91 50  v cc 50  d d figure 7. standard lvds interface figure 8. standard hstl interface figure 9. standard 50  load cml interface gnd v ee gnd gnd v ee gnd gnd v ee gnd v ee gnd gnd z v cc v cc lvttl driver ep91 d d 1.5 v figure 10. standard lvttl interface z v cc v cc lvcmos driver ep91 d d open figure 11. standard lvcmos interface (d will default to v cc /2 when left open. a reference voltage of v cc /2 should be applied to d input, if d is interfaced to cmos signals) gnd (externally generated reference voltage)
mc100ep91 www.onsemi.com 8 figure 12. typical termination for output driver and device evaluation (see application note and8020/d ? termination of ecl logic devices) driver device receiver device qd q d z o = 50  z o = 50  50  50  v tt v tt = gnd ? 2.0 v resource reference of application notes an1405/d ? ecl clock distribution techniques an1406/d ? designing with pecl (ecl at +5.0 v) an1503/d ? eclinps  i/o spice modeling kit an1504/d ? metastability and the eclinps family an1568/d ? interfacing between lvds and ecl an1672/d ? the ecl translator guide and8001/d ? odd number counters design and8002/d ? marking and date codes and8020/d ? termination of ecl logic devices and8066/d ? interfacing with eclinps and8090/d ? ac characteristics of ecl devices
mc100ep91 www.onsemi.com 9 package dimensions soic ? 20 wb dw suffix case 751d ? 05 issue h 20 1 11 10 b 20x h c l 18x a1 a seating plane  h x 45  e d m 0.25 m b m 0.25 s a s b t e t b a dim min max millimeters a 2.35 2.65 a1 0.10 0.25 b 0.35 0.49 c 0.23 0.32 d 12.65 12.95 e 7.40 7.60 e 1.27 bsc h 10.05 10.55 h 0.25 0.75 l 0.50 0.90  0 7 notes: 1. dimensions are in millimeters. 2. interpret dimensions and tolerances per asme y14.5m, 1994. 3. dimensions d and e do not include mold protrusion. 4. maximum mold protrusion 0.15 per side. 5. dimension b does not include dambar protrusion. allowable protrusion shall be 0.13 total in excess of b dimension at maximum material condition.  11.00 20x 0.52 20x 1.30 1.27 dimensions: millimeters 1 pitch *for additional information on our pb-free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* recommended 10 20 11
mc100ep91 www.onsemi.com 10 package dimensions ? 24, 4x4, 0.5p mn suffix case 485l issue b notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. dimension b applies to plated terminal and is measured between 0.25 and 0.30 mm from the terminal tip. 4. coplanarity applies to the exposed pad as well as the terminals. seating plane d b 0.15 c a a3 a e pin 1 refeence 2x 0.15 c 2x 0.08 c 0.10 c c dim min max millimeters a 0.80 1.00 a1 0.00 0.05 a3 0.20 ref b 0.20 0.30 d 4.00 bsc d2 2.70 2.90 e 4.00 bsc e2 2.70 2.90 e 0.50 bsc l 0.30 0.50 24x l d2 b 1 7 13 19 e/2 e2 e 24 0.10 b 0.05 a c c l1 detail a l alternate constructions l ??? ?? dimensions: millimeters 2.90 4.30 4.30 0.50 0.55 0.32 24x 24x pitch 1 2.90 recommended note 4 a1 24x note 3 l1 0.05 0.15 on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent ? marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does o n semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typic als? must be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 mc100ep91/d literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative eclinps is a trademark of semiconductor components industries, llc (scillc) or its subsidiaries in the united states and/or oth er countries.


▲Up To Search▲   

 
Price & Availability of MC100EP91DWG

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X